Method of using vertically configured chamber used for multiple processes

ABSTRACT

The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

This application is a division of application Ser. No. 09/466,014 filedDec. 17, 1999 now U.S. Pat. No. 6,352,623.

FIELD OF THE INVENTION

The present invention relates to methods and apparatus for carrying outmultiple processes such as depositing, plating, polishing, etching aconductive material and rinsing, cleaning, and modifying the surface ofa substrate using a vertically configured containment chamber. Moreparticularly, the present invention is directed to a verticallyconfigured containment chamber that can be used for carrying out a firstset of processes using one section of the chamber and another set ofprocesses using a different section of the chamber.

BACKGROUND OF THE INVENTION

A conventional process step in the manufacturing of integrated circuitsand devices involves plating a conductive material on a semiconductorwafer or a workpiece surface. For example, an “electro chemicalmechanical deposition” (ECMD) method can be used to achieve such aresult. One goal of ECMD is to uniformly fill the holes and trenches onthe wafer/workpiece surface with the conductive material whilemaintaining the planarity of the surface. The ECMD process is generallyperformed in a chamber specifically designed for such deposition. A moredetailed description of the ECMD method and apparatus can be found inthe co-pending U.S. application Ser. No. 09/201,929, entitled “Methodand Apparatus For Electro Chemical Mechanical Deposition”, commonlyowned by the assignee of the present invention.

If a conventional plating process is performed to deposit the conductivematerial, after performing such step in a deposition chamber, theworkpiece may be transferred to another chamber for polishing (e.g.,chemical mechanical polishing). In other instances, for example, ECMD,the deposition and polishing process can be performed using a dualdepositing/polishing tool in a combined deposition/polishing chamber.

Regardless of which process used, the workpiece is next transferred to arinsing/cleaning chamber after the deposition and/or polishing steps. Arobotic arm/machine that lifts the workpiece by its edges from, forexample, the deposition/polishing chamber to another horizontallyconfigured cleaning chamber can perform this transfer process.Additionally, a workpiece cassette may be used to store the workpiece asit is being transferred from the deposition/polishing chamber to thecleaning chamber. The workpiece surface can then be cleaned using, forexample, a spin, rinse, and dry process, as known in the art.

During such transfer of the workpiece from one chamber to another,contaminants such as particles may attach themselves on the workpiecesurface because the workpiece is exposed to the external environment.The source of these contaminants may be the surrounding air, theprocessing facility, personnel, process chemicals, or the like. In somecases, exposing the workpiece to light between processing steps may notbe desirable. The workpiece surface must be free of such contaminants;otherwise, the contaminants may affect device performancecharacteristics and may cause device failure to occur at faster ratesthan usual. Thus, such contaminants can result in defective chips, whichresults in lost revenues and low overall process yield for themanufacturer.

In the conventional method and apparatus described above, therinsing/cleaning and deposition/polishing chambers are at least twoseparate horizontally configured chambers that are located apart fromeach other. Thus, workpieces are exposed to potential contaminants asthey are transferred from one chamber to another. In addition, morephysical space in a clean room is occupied when multiple chambers arerequired. This increases the costs for manufactures as they must uselarger facilities in order to use such chambers.

Although, example here is given for carrying out thedepositing/polishing and rinsing/cleaning processes, there are othertypes of processes that are being carried out in other horizontallyconfigured chambers. These processes include etching or otherwisemodifying the workpiece surface, depositing different materials on theworkpiece surface, etc. Regardless of the specific processes that arebeing carried out in these conventional chambers, the costs associatedto operate such chambers are nevertheless very high for the reasonsmentioned above.

Therefore, there is a need for methods and apparatus for carrying outmultiple processes on a workpiece using a vertically configured chamberwithout exposing the workpiece to the external environment. There isalso a particular need for methods and apparatus fordepositing/polishing the conductive material on the workpiece surfaceand then rinsing/cleaning such surface without exposing the workpiece tocontaminants. Accordingly, the present invention provides a verticallyconfigured containment chamber that can be used for carrying outdifferent processes on the workpiece surface. The containment chamber ofthe present invention can be specifically used for bothdepositing/polishing the conductive material and rinsing/cleaning theworkpiece surface. The present invention further provides a more costeffective, efficient, contaminant free methods and apparatus than thosecurrently available.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide methods andapparatus for carrying out multiple processes in multiple sections of avertically configured containment chamber.

It is another object of the present invention to provide methods andapparatus for carrying out multiple processes such as depositing,plating, polishing, etching, rinsing, cleaning, and modifying aconductive material and/or a substrate surface using a verticallyconfigured containment chamber.

It is yet another object of the present invention to provide methods andapparatus that deposits a conductive material on a workpiece surface andthen cleans the same surface in a vertically configured containmentchamber.

It is another object of the present invention to provide methods andapparatus that deposits a conductive material on a workpiece surfaceusing electro chemical mechanical deposition and cleans the same surfaceusing a spin, rinse, and dry process in a vertically configuredcontainment chamber.

It is a further object of the present invention to provide methods andapparatus that reduces/eliminates contaminants from being formed on theworkpiece surface during multiple processing steps.

It is yet another object of the present invention to provide methods andapparatus for decreasing the physical space occupied by multiplechambers by providing a vertically configured containment chamber formultiple processes.

It is yet another object of the present invention to provide methods andapparatus that efficiently deposits and cleans a workpiece surface in avertically configured containment chamber.

These and other objects of the present invention are obtained byproviding a vertically configured containment chamber that can be usedfor multiple processes such as depositing a conductive material on theworkpiece surface and cleaning the same surface. In one specificembodiment of the present invention, an electo chemical mechanicaldeposition can be performed in the lower half of the containment chamberwhile a spin, rinse, and dry process can be performed in the upper halfof the containment chamber. A movable process/rinse guard is positionedin between the lower and upper halves of the containment chamber suchthat the two halves of the chamber are physically separated from eachother during processing in the upper half of the containment chamber.The movable process/rinse guard further prevents a cleaning solutionfrom entering the lower half of the containment chamber.

In a second embodiment of the present invention, multiple flaps are usedto separate the upper and lowers halves of the containment chamber. Forexample, when the flaps are in their vertical position, adepositing/polishing process can be performed in the lower half, andwhen the flaps are in their horizontal position, a rinsing/cleaningprocess can be performed in the upper half. In addition, when the flapsare in their horizontal position, loss of electrolyte solution from thecontainment chamber due to vaporization is minimized.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects and advantages of the present invention willbecome apparent and more readily appreciated from the following detaileddescription of the presently preferred exemplary embodiments of theinvention taken in conjunction with the accompanying drawings, of which:

FIG. 1 illustrates a cross sectional view of a first preferredembodiment of the present invention for use during adepositing/polishing process;

FIG. 2 illustrates a cross sectional view of a first preferredembodiment of the present invention for use during a rinsing/cleaningprocess;

FIG. 3 illustrates a perspective view of a process guard supportmechanism in accordance with the first preferred embodiment of thepresent invention;

FIG. 4 illustrates a cross sectional view of a second preferredembodiment of the present invention for use during adepositing/polishing process;

FIG. 5 illustrates a cross sectional view of a second preferredembodiment of the present invention during the transition from adepositing/polishing process to a rinsing/cleaning process;

FIG. 6 illustrates a cross sectional view of a second preferredembodiment of the present invention for use during a rinsing/cleaningprocess;

FIG. 7 illustrates a perspective view of the upper chamber in accordancewith the second preferred embodiment of the present invention; and

FIG. 8 illustrates a cross sectional view of yet another preferredembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The preferred embodiments of the present invention will now be describedwith greater detail with reference to FIGS. 1-8. As described elsewhereherein, various refinements and substitutions of the various embodimentsare possible based on the principles and teachings herein.

As noted above, conventional processing uses different processingchambers, at different times, to obtain a conductive material on thewafer surface and to rinse/clean/etch/modify/dry the same surface.Accordingly, the equipment cost needed for depositing, polishing,etching, rinsing, modifying the surface, drying, and cleaning can behigh. The present invention contemplates using one vertically configuredcontainment chamber that plates/deposits and/or polishes the conductivematerial on the workpiece/wafer, as well asrinses/cleans/etches/modifies/dries the workpiece/wafer surface. Inother words, the present invention provides a vertically configuredcontainment chamber used for carrying out multiple processes.

Furthermore, although a semiconductor wafer will now be used to describethe preferred embodiments of the present invention, other semiconductorworkpieces such as flat panels or magnetic films may also be used inaccordance with the present invention.

FIG. 1 illustrates a cross sectional view of a first preferredembodiment of the present invention during the deposition process. Acontainment chamber 2 includes two sections, an ECMD lower section 4 anda rinsing/cleaning top section 6. The ECMD section 4 occupies the lowerhalf of the containment chamber 2, and the cleaning section 6 occupiesthe upper half of the containment chamber 2. In the first mode ofoperation, an ECMD process is performed in the ECMD section 4, and inthe second mode of operation, a rinsing/cleaning process is performed inthe cleaning section 6.

FIG. 1 illustrates the first mode of operation in accordance with thefirst preferred embodiment of the present invention. A wafer holder 10supports a wafer 12 as ECMD is performed in the ECMD section 4. Thewafer holder 10 may include a nonconductive, preferably circular, chuck14 with a cavity (not shown) that is preferably a few millimeters deepat its center and which cavity may contain a resting pad (not shown).The wafer 12 is loaded into the cavity, backside first, against theresting pad using a conventional type of transport or vacuum mechanismto ensure that the wafer 12 is stationary and secure with respect to thewafer holder 10 while in use. A shaft 16 is used to raise and lower thewafer holder 10 within the containment chamber 2. The shaft 16 isfurther adapted to move side to side and to rotate about axis 18, thusallowing the wafer holder 10 and the wafer 12 to move side to side androtate about the same axis 18. Other conventional wafer holders can beused in accordance with the present invention.

During the ECMD process, a conductive material is applied in holes,trenches, and/or other desired areas on the wafer 12 using anelectrolyte solution held in an ECMD apparatus 20. In the exampleprovided herein, the ECMD apparatus 20 includes a pad assembly 23 havinga pad 24 placed on an anode 26 for depositing and/or polishing theconductive material on the wafer 12. The electrolyte solution (notshown) may be held in the ECMD apparatus 20 or flowed through the pad24. In one embodiment, the pad 24 may include pores 25 so that theelectrolyte solution can be held and/or flowed through the pad 24. Theterm “pores” herein is broadly defined as any type of perforation in thepad 24 that allows the electrolyte to flow from the bottom surface tothe upper surface of the pad 24. Also, in the preferred embodiment, thepad 24 should be an abrasive pad or at a minimum, the pad surface facingthe wafer 12 should be abrasive.

In another embodiment, the ECMD apparatus 20 may include a pad assemblyhaving a circular or square pad mounted on a cylindrical anode thatrotates around another axis. Such apparatus is described in theco-pending U.S. application Ser. No. 09/201,929, entitled “Method andApparatus For Electro Chemical Mechanical Deposition”, commonly owned bythe assignee of the present invention. Although two embodiments of theECMD apparatus 20 are described herein, other ECMD apparatus and methodsmay be used in accordance with the present invention. What is importantto note from the previous examples is that the ECMD process is performedin the lower section of the containment chamber 2.

In the ECMD process, chemical/electrochemical etching of the workpiecesurface can also be carried out by controlling the potential differencebetween the wafer surface and the anode 26. For example, when applying apotential difference where the anode is more positive than the wafersurface, deposition may be performed. On the other hand, when applying apotential difference where the anode is more negative than the wafersurface, electrochemical etching may be performed. Furthermore, when apotential difference between the anode and the wafer surface is zero,chemical etching of the wafer surface may be performed.

Additionally, in the ECMD section 4, splashguards 22A may be used andextend out from the inner walls of the containment chamber 2. Thesplashguards 22A prevent the electrolyte solution from exiting from theECMD section 4 to the top section of the chamber 2. Further, asdescribed in more detail below, the splashguards 22A also prevent acleaning solution from the top section of the chamber 2 from enteringthe ECMD apparatus 20.

FIG. 2 illustrates a cross sectional view of a second mode of operationin accordance with the first preferred embodiment of the presentinvention. The rinsing/cleaning section 6 includes the upper half of thecontainment chamber 2. The border/barrier between the cleaning section 6and the ECMD section 4 is determined by a process guard 30 that isattached to a process guard support 31. The process guard support 31 maybe in the form of a pair of tensioned cords that are looped around idlerollers 32 b, 32 c, 32 d, and the motor driven roller 32 a. The motordriven roller 32 a allows the process guard support 31 and the processguard 30 to move in and out of the chamber 2. As shown, the processguard 30 and the support 31 are positioned at an angle Z from thehorizontal plane 50. In the preferred embodiment, the angle Z from ahorizontal plane 50 to the plane of the process guard 30 is between 5-60degrees (or any other angle Z such that the cleaning solution can beflowed out of the chamber 2). Such incline of the process guard 30 isrequired such that the cleaning solution can be flowed out of thecontainment chamber 2 after cleaning/rinsing the wafer 12.

One end of the process guard 30 fits into slit 34 and the other end intoa housing 38 along the two side walls of the containment chamber 2 suchthat a physical border is formed between the ECMD section 4 and thecleaning section 6. Other methods of supporting the process guard 30 andthe process guard support 31 in the containment chamber 2 may be used inthe present invention. The process guard 30 is moved in and out of thehousing 38 via the set of rollers 32 a, 32 b, 32 c, and 32 d, which movethe process guard support 31. The roller 32 a is preferably attached toa mechanical device capable of rotating the roller 32 a in bothclockwise and counterclockwise directions so that one end of the processguard 30 can be moved from one wall to the opposite wall so as to form atemporary border between the two sections 4, 6. In other embodiments,other devices and methods may be used to move and position the processguard 30 from the housing 38 to the containment chamber 2 to theposition as shown in FIG. 2.

FIG. 3 illustrates a perspective view of the process guard supportmechanism in accordance with the first preferred embodiment of thepresent invention. This figure illustrates the process guard 30 andprocess guard support 31 positioned in the second mode of operationwhere the rinsing/cleaning step is performed. An adhesive, screw andnut, or the like can be used to attach the bottom side of the processguard 30 to the process guard support 31.

The process guard 30 is made from a material that is rigid enough tosupport the cleaning solution as it is flowed out of the cleaningsection 6, while being flexible enough to bend as it is being stored inthe housing 38. Preferably, the process guard 30 and the support 31 aremade from materials such as plastic, metals, or coated metals that arecompatible with the chemical used in the chamber. The process guard 30is shaped in a configuration that fits inside the containment chamber 2such that the cleaning solution is prevented from entering the ECMDsection 4.

Referring back to FIG. 2, the cleaning section 6 further includesmultiple nozzles 40 for spraying the rinsing/cleaning solution 42 ontothe wafer 12. An inlet tube 44 is used to flow the cleaning solutionthrough the nozzles 40. The cleaning solution 42 may be water, acidic orbasic solutions or organic solvents. A second set of splashguards 22Bmay be positioned in the cleaning section 6 so as to prevent thecleaning solution 42 from exiting from the top section of thecontainment chamber 2.

In operation according to the first preferred embodiment of the presentinvention, after performing the ECMD process as described earlier, thewafer holder 10 supporting the wafer 12 is vertically raised from thedeposition section 4 such that it is positioned in the cleaning sectionchamber 6 for the rinse, spin, and dry process. The wafer holder 10 isvertically raised in between the process guard support 331 (i.e., twosets of cords) (FIG. 3). The process guard 30 is then guided by theprocess guard support 31 using rollers 32 a, 32 b, 32 c, 32 d into thecontainment chamber 2 from the housing 38 so as to form a physicalborder between the two sections 4, 6. The process guard 30 should beflexible enough to bend during the guiding process from the housing 38to the containment chamber 2, but should also be rigid enough to beguided into the slit 34. Any known apparatus and method may be used toguide the process guard 30 in and out of the housing 38. Therinsing/cleaning solution 42 is then applied to the wafer 12 through thenozzles 40. During this process, the rinsing/cleaning solution 42 thatdrips onto the process guard 30 is flowed to the housing 38 or anoutside reservoir (not shown) for storage and/or disposal. The inclineof the process guard 30 allows the used rinsing/cleaning solution 42 toflow out of the containment chamber 2.

The cleaning process of the present invention is a spin, rinse, and dryprocess, as known in the art. The wafer holder 10 rotates the wafer 12at a very high speed. The rinsing/cleaning solution 42 isapplied/sprayed onto the wafer surface using nozzles 40. Once thespraying is completed, the wafer is dried by the rotation of the waferholder 10. The wafer is then transferred to the next processing station.

The present invention contemplates adding another processing step suchthat the wafer 12 is cleaned before and after performing the ECMD. Forexample, the wafer 12 can be cleaned first in the cleaning section 6before performing the ECMD process in ECMD section 4. Then, the wafer 12can be cleaned for the second time in the cleaning section 6. Thesolution used in the cleaning section 6 may contain chemicals that canmodify the surface of the wafer 12. For example, a mild etching solutioncan be used for this purpose.

FIGS. 4-7 illustrate cross sectional views of the second preferredembodiment of the present invention. In this second embodiment, multipleflaps are used to separate the lower processing section from the upperprocessing section. For example, when flaps 150 are in the verticalposition as shown in FIG. 4, a first process can be performed in thelower section. On the other hand, when the flaps 150 are in thesubstantially horizontal position as shown in FIG. 6, a second processcan be performed in the upper section.

Described hereinafter in greater detail is one possible application ofthe present invention where the first process that is carried out in thelower section is a depositing/polishing process and the second processthat is carried out in the upper section is a rinsing/cleaning process.

Referring back to FIG. 4, a containment chamber 100 includes twosections similar to that described above, a depositing/polishing lowersection 104 and a rinsing/cleaning top section 106. In the first mode ofoperation, a depositing/polishing is performed in the section 104, andin the second mode of operation, a rinsing/cleaning step is performed inthe section 106.

In the first mode of operation in accordance with the second preferredembodiment of the present invention, a wafer holder 10, as describedabove, supports a wafer 12 as deposition and polishing process isperformed in the lower section 104. The flaps 150 via linkageshafts/rollers 152 are positioned vertically such that the wafer holder10 using shaft 16 can be lowered into the lower section 104.

During the deposition and polishing process, a conductive material isapplied in holes, trenches, and/or other desired areas in the wafer 12using an electrolyte solution while the conductive material is polishedfrom undesired areas on the wafer. The deposition/polishing apparatus120 is similar to that described earlier herein. In the example providedherein, the apparatus 120 includes a pad assembly 123 having a pad 124placed on an anode 126 for depositing/polishing the conductive materialon the wafer 12. The chamber 100 also includes sealing and anti-splashportion 134 and O-ring 132 to prevent any solution from exiting thechamber 100.

FIG. 5 illustrates a cross sectional view of a second preferredembodiment of the present invention during the transition from adepositing/polishing process to a rinsing/cleaning process. After thedeposition and polishing process in the lower section 104, the waferholder 10 is raised using shaft 16 to approximately its uppermostposition. The flaps 150 are then moved from their vertical position totheir horizontal position using the linkage shaft/rollers 152. Once theflaps 150 are in their final horizontal position, the second mode ofoperation (rinsing/cleaning) can be carried out.

FIG. 6 illustrates a cross sectional view of a second preferredembodiment of the present invention for use during a rinsing/cleaningprocess. From its uppermost position of the wafer holder 10 in FIG. 5,the wafer holder 10 is lowered slightly to a position that is suitablefor rinsing/cleaning the wafer 12. The rinsing/cleaning process of thewafer 12 is similar to that described earlier herein, where the rinsingcleaning solution is provided via nozzles 140 and other inlet tubes thatare commonly used in this field. In other embodiments, the wafer 12 maybe brush cleaned using a brush as known in the art. It should be notedthat the used rinsing/cleaning solution that drips down from the wafer12 is guided by the flaps 150 into outlet channels 151 along the sidewalls of the upper section 106. In this manner, the used solution isdrained out of the chamber 100 using outlet channels 151 , which isdescribed in more detail below.

The flaps 150 are made from a material that is rigid enough to supportthe cleaning solution as it is flowed out of the rinsing/cleaningsection 106. Preferably, the flaps 150 are made from materials such asplastic or teflon, or any other material that is compatible with thechemical used in the chamber.

An additional advantage of using the second embodiment of the presentinvention is that when the chamber 100 is not being used, the flaps 150can be positioned in a horizontal position to enclose the lower section104 of the chamber 100. When the lower section 104 is enclosed usingflaps 150, this reduces/minimizes electrolyte solution evaporation fromthe chamber 100, thereby saving money and resources for themanufacturer.

During the rinsing/cleaning process according to either the first orsecond preferred embodiments, the wafer 12 can be rotated using thewafer holder 10 at 5 to 200 rpm, but preferably between 10 to 150 rpm.The rinsing/cleaning solution can be applied to the wafer 12 at 2 to2000 ml/minute, but preferably between 5 to 800 ml/minute for a periodranging from 5 to 15 seconds. Thereafter, the wafer 12 may be spun driedby rotating the wafer 12 at 500 to 2500 rpm, but preferably between 800to 2000 rpm for a period of about 10 seconds. After suchrinsing/cleaning process, the wafer 12 can be transferred from theeither chamber 2, 100 using the wafer holder 10 to another processingdevice.

FIG. 7 illustrates a perspective view of the upper chamber in accordancewith the second preferred embodiment of the present invention. Flaps 150can be moved up and down around the axis of the linkage shaft/rollers152 using motors 153. Further, the flaps 150 are designed such that whenthey are in the closed position, the used solution falling on the flaps150 is flowed into the outlet channels 151 along the walls of the uppersection 106. The used solution is then drained from the outlet channels151 into a reservoir (not shown) for recycling and/or disposal.

FIG. 8 illustrates a cross sectional view of yet another preferredembodiment of the present invention. In this embodiment, the wafer 12 isrinsed through sprayers 141 that are mounted on the flaps 150. Therinsing/cleaning solution can be fed to the sprayers 141 through varioustubes/pipes that are located either inside/outside the flaps 150.Although FIG. 8 illustrates one sprayer 141 mounted per each flap 150,more or less than one sprayer can be mounted on either flap 150.

Sprayers 141 can also be used to blow air/gases such that the wafer 12can be dried quickly. It is also possible to use different sprayers thatare used for different purposes (i.e., one for liquid and one for gas).In other embodiments, both the sprayers mounted on the flaps 150 (FIG.8) and side mounted nozzles (FIG. 6) can be used to simultaneouslyrinse/clean the wafer 12.

Although a specific application of the present invention involvingdeposition in the lower section and rinsing/cleaning in the uppersection has been described in detail, the present invention contemplatesperforming other types of processes in the upper and lower sections,which sections are separated by the movable process guard or flaps. Inthis case, the nozzles and/or sprayers can be used to provide various“process solutions” or “process gases” to the wafer surface. Forexample, as described above, if the upper section is used for cleaning,the process solution can be a cleaning solution. If, on the other hand,the process in the upper section is an etching or surface modificationprocess, then the process solution may be a mild etching solution.Furthermore, process gases such as O₂, CF₄, CL₂, NH₂, etc., can beintroduced onto the wafer surface in the upper section. The wafer mayalso be heated (using lamp, etc.) when the gas is introduced such thatsurface modifications can result. For example, O₂ gas may be used tooxidize the wafer surface prior to performing the next processing stepin the lower section.

In other instances, the upper section may be used for deposition, whichin this case, the process solution may contain chemicals that cause filmgrowth on the wafer surface as a result of the applied solution.Electroless material deposition solutions such as electroless nickel,palladium, gold, copper, platinum, and the like are examples of processsolutions that can be used in the upper section to deposit a film on thewafer surface.

The processing sequence as described above in the upper and lowersections may be changed, thus allowing for multiple processes to becarried out in each section. For example, the wafer surface may first becleaned, etched, modified, etc., using a cleaning/etching solution inthe upper section with the flaps/process guard in their /its appropriateposition(s). After cleaning/etching the wafer surface, the wafer canfurther be rinsed/dried again in the upper section. Thereafter, afterrepositioning the flaps/process guard, the wafer can be lowered into thelower section where metal deposition and polishing can be carried out.The deposited metal may be Cu, Au, Pt, Ni, Co, Ni-Co alloy, and thelike. After deposition, the wafer can again be raised to the uppersection such that the wafer surface can be cleaned. After this cleaningprocess, a deposition step can be carried out in the upper section, asdescribed above. For example, after Ni deposition in the lower section,Au may be deposited over the Ni film in the upper section using anelectroless Au solution applied (using nozzles/sprayers) over the Nicoated wafer surface. The Au solution and the wafer may further beheated at this stage. After deposition in the upper chamber, anotherrinsing and cleaning process can be carried out in upper section.

From the previous discussion, an important aspect of this invention isthat it provides a vertically configured chamber such that multipleprocesses can be carried out in the different sections of the chamber.Sections are separated from each other using a removable process guardor flaps such that one chemistry used in one section does not effect adifferent chemistry used in another section. Although the examples shownabove discloses two sections, three or more sections can be used so longas the physical height of each section and the overall height of thechamber is kept within a reasonable limit.

For example, the vertically configured chamber can be sectioned off intothree or more distinct sections having top, middle, and bottom sections.The top section can be used for first depositing the conductive materialon the wafer surface using a first set of nozzles/sprayers and processguard/flaps, which process guard/flaps prevent(s) the depositingsolution from entering the middle section, as described earlier herein.The wafer can then be lowered into the middle section after positioningthe first process guard in its housing or the flaps in their verticalpositions. The wafer surface can then be cleaned, rinsed, etc. using asecond set of nozzles/sprayer and process guard/flaps, which processguard/flaps prevent(s) the cleaning, rinsing, etc., solutions fromentering the bottom section of the chamber. The wafer can be furtherlowered into the bottom section of the chamber for additional depositionafter positioning the second process guard in its housing or the flapsin their vertical positions. Thereafter, the wafer can be raised to themiddle section for a second cleaning/rinsing. As can be appreciated,this process can continue allowing for multiple cleaning/rinsing anddepositing steps.

Although specific embodiments, including specific apparatus, processsteps, process parameters, materials, solutions, etc., have beendescribed, various modifications to the disclosed embodiments will beapparent to one of ordinary skill in the art upon reading thisdisclosure. Therefore, it is to be understood that such embodiments aremerely illustrative of and not restrictive of the broad invention andthat this invention is not limited to the specific embodiments shown anddescribed. Those skilled in the art will readily appreciate that manymodifications of the exemplary embodiment are possible withoutmaterially departing from the novel teachings and advantages of thisinvention.

1. A method of carrying out at least two processing steps on aworkpiece, the method comprising the steps of: lowering the workpieceinto a lower section of a chamber; carrying out a first processing stepto remove conductive material from the workpiece in the lower section ofthe chamber; raising the workpiece from the lower section to an uppersection of the chamber; positioning a movable guard between the lowersection and the upper section that is adapted to prevent liquidintroduced into the upper section of the chamber from entering the lowersection of the chamber; and carrying out a second processing step on theworkpiece in the upper section using the liquid, whereby the liquid isprevented from entering the lower section of the chamber by the movableguard.
 2. A method according to claim 1, wherein the first processingstep comprises one of polishing and etching the conductive material froma surface on the workpiece.
 3. A method according to claim 1, whereinthe second processing step comprises one of rinsing, cleaning,depositing on, etching, modifying, and drying a surface on theworkpiece.
 4. A method according to claim 1, wherein the firstprocessing step further includes the step of electro chemicallydepositing the conductive material on the workpiece.
 5. A methodaccording to claim 1, wherein the first processing step electrochemically removes the conductive material from the workpiece.
 6. Amethod according to claim 1, wherein the second processing stepcomprises the step of chemically etching the workpiece in the uppersection.
 7. The method of claim 1, wherein the first process step in thelower chamber is performed so that a surface of the workpiece beingoperated upon is disposed in a substantially horizontal orientation. 8.The method of claim 1, further comprising flowing the liquid out of thechamber after carryout out the second processing step.
 9. A method ofcarrying out at least two processing steps on a workpiece, the methodcomprising the steps of: carrying out a first processing step on theworkpiece in an upper section after positioning a movable guard betweenthe upper section and a lower section of a chamber, the first processingstep using a liquid; repositioning the movable guard such that theworkpiece can be lowered into the lower section of the chamber; loweringthe workpiece into the lower section of the chamber; and carrying out asecond processing step on the workpiece in the lower section of thechamber, the second processing step taking place after the firstprocessing step.
 10. A method according to claim 9, wherein the firstprocessing step comprises one of rinsing, cleaning, depositing on, andetching a surface on the workpiece.
 11. A method according to claim 10,wherein the step of etching or modifying further comprises the step ofproviding a gas to the surface of the workpiece selected from a groupconsisting of O₂, CF₄, Cl₂, NH₂.
 12. A method according to claim 11,further comprising the step of heating the workpiece while the gas isprovided to the surface of the workpiece.
 13. The method of claim 9,wherein the first process step in the lower chamber is performed so thata surface of the workpiece being operated upon is disposed in asubstantially horizontal orientation.
 14. The method according to claim9 further including the steps of: raising the workpiece into the uppersection of the chamber; repositioning the movable guard between theupper section and the lower section of the chamber; and carrying out athird processing step on the workpiece in the upper section of thechamber, the third processing step taking place after the secondprocessing step.
 15. The method of claim 14, wherein the step ofcarrying out the second processing step includes removing conductivematerial from the workpiece in the lower section of the chamber.
 16. Amethod according to claim 15, wherein the second processing stepcomprises one of polishing and etching the conductive material from asurface on the workpiece.
 17. A method according to claim 15, whereinthe second processing step further includes the step of electrochemically depositing the conductive material on the workpiece.
 18. Amethod according to claim 15, wherein the second processing step electrochemically removes the conductive material from the workpiece.
 19. Amethod according to claim 14, wherein the third processing stepcomprises one of rinsing, cleaning, depositing on, etching, modifying,and drying a surface on the workpiece.
 20. A method of processing aworkpiece using a vertical multi-chambered processing module comprisingthe steps of: removing conductive material from the workpiece in a firstchamber by applying a potential difference between the workpiece and ananode; transferring the workpiece to a second chamber verticallydisposed above the first chamber; isolating the first chamber from thesecond chamber using a movable guard that is adapted to prevent liquidintroducing to the second chamber from entering the first chamber; andmodifying the workpiece in the second chamber using the liquid, wherebythe liquid is prevented from entering the first chamber by the movableguard.
 21. A method of claim 20, wherein the removing step furtherincludes the step of depositing a material on the workpiece.
 22. Amethod of claim 20, wherein the removing step further includes the stepof electro chemically mechanically depositing a conductive material onthe workpiece.
 23. A method of claim 20, wherein the removing stepinclude1 polishing the conductive material from the workpiece.
 24. Themethod of claim 20, wherein the removing step includes electrochemically removing a conductive material from the workpiece.
 25. Themethod of claim 20, wherein the modifying step includes cleaning asurface of the workpiece.
 26. The method of claim 20, wherein themodifying step includes chemically etching a surface of the workpiece.27. The method of claim 20, wherein the step of removing conductivematerial from the workpiece in a first chamber is performed so that asurface of the workpiece being operated upon is disposed in asubstantially horizontal orientation.
 28. The method of claim 20,further comprising allowing the liquid to flow out of the second chamberafter modifying the workpiece.